B2S Datasheet, PDF (1/4 Pages) Vishay Siliconix – Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier

New Product
B2S, B4S & B6S
Vishay General Semiconductor
Miniature Glass Passivated Single-Phase
Surface Mount Bridge Rectifier
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FEATURES
• UL recognition, file number E54214
• Saves space on printed circuit boards
• Ideal for automated placement
• Middle surge current capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 250 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
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TO-269AA (MBS)
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for power supply, lighting ballaster, battery
charger, home appliances, office equipment, and
telecommunication applications.
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
I_R
V_F
T_J max.
0.5 A
200 V, 400 V, 600 V
30 A
5 µA
1.0 V
150 °C
MECHANICAL DATA
Case: TO-269AA (MBS)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked on body
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
B2S
B4S
B6S
Device marking code
B2
B4
B6
Maximum repetitive peak reverse voltage
V_RRM
200
400
600
Maximum RMS voltage
V_RMS
140
280
420
Maximum DC blocking voltage
V_DC
200
400
600
Maximum average forward output rectified current on
glass-epoxy P.C.B. (Fig. 1)
I_F(AV)
0.5 ⁽¹⁾
Peak forward surge current 10 msec single half sine-wave
superimposed on rated load
I_FSM
30
Rating for fusing (t < 8.3 ms)
I²t
5.0
Operating junction and storage temperature range
T_J, T_STG
Note:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads
- 55 to + 150
UNIT
V
V
V
A
A
A²s
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Max. instantaneous forward voltage drop per diode 0.5 A
V_F
Maximum DC reverse current at rated DC blocking
voltage per diode
T_A = 25 °C
T_A = 125 °C
I_R
Typical junction capacitance per diode
4.0 V, 1 MHz
C_J
VALUE
1.0
5.0
100
13
UNIT
V
µA
pF
Document Number: 88893 For technical questions within your region, please contact one of the following:
Revision: 01-Feb-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
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