B2M_13 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Miniature Glass Passivated Single-Phase Bridge Rectifiers

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B2M, B4M, B6M
Vishay General Semiconductor
Miniature Glass Passivated Single-Phase Bridge Rectifiers
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Case Style MBM
PRIMARY CHARACTERISTICS
Package
MBM
I_F(AV)
V_RRM
I_FSM
I_R
V_F at I_F = 0.5 A
T_J max.
Diode variations
0.5 A
200 V, 400 V, 600 V
30 A
5 μA
1.0 V
150 °C
Quad
FEATURES
• UL recognized, file number E54214
• Ideal for printed circuit boards
• Applicable for automative insertion
• Middle surge current capability
• Recommended for non-automotive applications
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for power supply, lighting ballaster, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: MBM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V_RRM
V_RMS
Maximum DC blocking voltage
V_DC
Maximum average forward output rectified current (fig. 1)
on glass-epoxy PCB
I_F(AV)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load (JEDEC method)
I_FSM
Rating for fusing (t < 8.3 ms)
I²t
Operating junction and storage temperature range
T_J, T_STG
Note
(1) _{On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads}
B2M
B2
200
140
200
B4M
B4
400
280
400
0.5 ⁽¹⁾
30
5.0
- 55 to + 150
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL
B2M
Maximum instantaneous forward
voltage drop per diode
I_F = 0.5 A
V_F
Maximum DC reverse current at rated ^TA ^{= 25 °C}
DC blocking voltage per diode
T_A = 125 °C
I_R
Typical junction capacitance per diode 4.0 V, 1 MHz
C_J
B4M
1.0
5.0
100
13
B6M
B6
600
420
600
B6M
UNIT
V
V
V
A
A
A²s
°C
UNIT
V
μA
pF
Revision: 16-Aug-13
1
Document Number: 88898
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000