B250C800DM-E345 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Glass Passivated Ultrafast Bridge Rectifier

B40C800DM, B80C800DM, B125C800DM, B250C800DM, B380C800DM
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Vishay General Semiconductor
Glass Passivated Ultrafast Bridge Rectifier
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Case Style DFM
PRIMARY CHARACTERISTICS
Package
DFM
I_F(AV)
V_RRM
I_FSM
I_R
V_F at I_F = 0.9 A
T_J max.
Diode variations
0.9 A
65 V, 125 V, 200 V, 400 V, 600 V
45 A
10 μA
1.0 V
125 °C
Quad
FEATURES
• Ideal for automated placement
• High surge current capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: 
For definitions of compliance please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: DFM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
B40
C800DM
Maximum repetitive peak reverse voltage
V_RRM
65
Maximum RMS input voltage R- and C-load
V_RMS
40
Maximum average forward output current ^{R- and L-load}
for free air operation at T_A = 45 °C
C-load
I_F(AV)
Maximum DC blocking voltage
Maximum peak working voltage
Maximum non-repetitive peak voltage
Maximum repetitive peak forward surge current
Peak forward surge current single sine-wave on rated load
Rating for fusing at T_J = 125 °C (t < 100 ms)
Minimum series resistor C-load at V_RMS = ± 10 %
Maximum load capacitance
+ 50 %
- 10 %
V_DC
V_RWM
V_RSM
I_FRM
I_FSM
I²t
R_T
C_L
65
90
100
1.0
5000
Operating junction temperature range
Storage temperature range
T_J
T_STG
B80
C800DM
125
80
125
180
200
2.0
B125
C800DM
200
125
0.9
0.8
200
300
350
10
45
10
4.0
B250
C800DM
400
250
400
600
650
8.0
B380
C800DM
600
380
600
900
1000
12.0
UNIT
V
V
A
V
V
V
A
A
A²s

2500
1000
500
200
μF
- 40 to + 125
°C
- 40 to + 150
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
B40
C800DM
B80
C800DM
Maximum instantaneous forward
voltage drop per diode
0.9 A
V_F
Maximum reverse current at rated
repetitive peak voltage per diode
I_R
B125
C800DM
1.0
10
B250
C800DM
B380
C800DM
UNIT
V
μA
Revision: 16-Aug-13
1
Document Number: 88533
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000