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AS4PGHM386A Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Current Density Standard Avalanche Surface Mount Rectifiers
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AS4PD, AS4PG, AS4PJ, AS4PK, AS4PM
Vishay General Semiconductor
High Current Density Standard Avalanche
Surface Mount Rectifiers
eSMP ® Series
K
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
FEATURES
• Very low profile - typical height of 1.1 mm
Available
• Ideal for automated placement
• Glass passivated chip junction
• Controlled avalanche characteristics
• Low leakage current
• High forward surge capability
• AEC-Q101 qualified
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
4.0 A
VRRM
200 V, 400 V, 600 V, 800 V,
1000 V
IFSM
EAS
100 A
20 mJ
VF at IF = 4 A
0.92 V
TJ max.
Package
Diode variations
175 °C
TO-277A (SMPC)
Single die
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive and telecommunication.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL AS4PD
Device marking code
AS4D
Max. repetitive peak reverse voltage
Max. DC forward current (fig. 1)
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
VRRM
IF (1)
IF (2)
IFSM
200
Non-repetitive avalanche energy 
at TJ = 25 °C
IAS = 2.5 A max.
IAS = 1.0 A typical
Operating junction and storage temperature range
EAS
TJ, TSTG
Notes
(1) Mounted on 20 mm x 20 mm pad areas, 1 oz. FR4 PCB
(2) Free air, mounted on recommended copper pad area
AS4PG
AS4G
400
AS4PJ
AS4J
600
4.0
2.4
AS4PK
AS4K
800
100
20
30
- 55 to + 175
AS4PM UNIT
AS4M
1000
V
A
A
mJ
°C
Revision: 14-Aug-13
1
Document Number: 88770
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000