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AS3BD Datasheet, PDF (1/4 Pages) Vishay Siliconix – Avalanche Surface Mount Rectifiers
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AS3BD, AS3BG, AS3BJ
Vishay General Semiconductor
Avalanche Surface Mount Rectifiers
DO-214AA (SMB)
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
trr
EAS
VF at IF = 3.0 A (TA = 125 °C)
TJ max.
Package
3.0 A
200 V, 400 V, 600 V
90 A
140 ns
20 mJ
0.86 V
175 °C
DO-214AA (SMB)
Diode variation
Single die
TYPICAL APPLICATIONS
For use in general purpose rectification of power
supplies, inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Controlled avalanche characteristics
• Low leakage current
• High forward surge capability
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified 
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current (fig. 1)
Peak forward surge current 10 ms single half sine-wave,
non-repetitive, cool junction
VRRM
IF (1)
IF (2)
IFSM
Non-repetitive avalanche energy at TJ = 25 °C
Operating junction and storage temperature range
IAS = 2.0 A max.
IAS = 1.0 A typ.
EAS
TJ, TSTG
Notes
(1) Mounted on 14 mm x 14 mm x 2 areas, 1 oz. FR4 PCB
(2) Free air, mounted on recommended 1.52 mm x 2.18 mm x 2 pad areas
AS3BD
A3D
200
AS3BG
A3G
400
3.0
2.0
90
20
30
-55 to +175
AS3BJ
A3J
600
UNIT
V
A
A
mJ
°C
Revision: 01-Dec-16
1
Document Number: 89377
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000