8TT100 Datasheet, PDF (1/8 Pages) Vishay Siliconix – High Performance Schottky Generation 5.0, 8 A

8TT100
Vishay High Power Products
TO-220AC
PRODUCT SUMMARY
I_F(AV)
V_R
V_F at 8 A at 125 °C
High Performance
Schottky Generation 5.0, 8 A
Base
cathode
2
1
3
Cathode Anode
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
RoHS
• Optimized V_F vs. I_R trade off for high efficiency ^COMPLIANT
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level
8A
100 V
0.58 V
APPLICATIONS
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
V_RRM
V_F
8 Apk, T_J = 125 °C (typical)
T_J
Range
VALUES
100
0.55
- 55 to 175
UNITS
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL TEST CONDITIONS
V_R
T_J = 25 °C
8TT100
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward
current
I_F(AV)
50 % duty cycle at T_C = 163 °C, rectangular waveform
Maximum peak one cycle
non-repetitive surge current
5 µs sine or 3 µs rect. pulse
Following any rated
I_FSM
load condition and with
10 ms sine or 6 ms rect. pulse
rated V_RRM applied
Non-repetitive avalanche energy E_AS
Repetitive avalanche current
I_AR
T_J = 25 °C, I_AS = 1.5 A, L = 60 mH
Limited by frequency of operation and time pulse duration so
that T_J < T_J max. I_AS at T_J max. as a function of time pulse
See fig. 8
VALUES
8
850
210
67
I_AS at
T_J max.
UNITS
A
mJ
A
Document Number: 94536
Revision: 05-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
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