8TQ100GS Datasheet, PDF (1/6 Pages) Vishay Siliconix – Schottky Rectifier, 8 A

8TQ...GS
Vishay High Power Products
Schottky Rectifier, 8 A
Base
cathode
2
D²PAK
1
3
Cathode Anode
PRODUCT SUMMARY
I_F(AV)
V_R
8A
80/100 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
Rectangular waveform
V_RRM
I_FSM
Range
t_p = 5 µs sine
V_F
8 Apk, T_J = 125 °C
T_J
Range
FEATURES
• 175 °C T_J operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for industrial level
DESCRIPTION
The 8TQ Schottky rectifier series has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175 °C junction
temperature. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
VALUES
8
80/100
850
0.58
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
8TQ080GS
80
8TQ100GS
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
See fig. 5
I_F(AV) 50 % duty cycle at T_C = 157 °C, rectangular waveform
Maximum peak one cycle
non-repetitive surge current
See fig. 7
5 µs sine or 3 µs rect. pulse
Following any rated
I_FSM
load condition and with
10 ms sine or 6 ms rect. pulse _{rated VRRM applied}
Non-repetitive avalanche energy
Repetitive avalanche current
E_AS
T_J = 25 °C, I_AS = 0.5 A, L = 60 mH
Current decaying linearly to zero in 1 µs
I_AR
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
8
850
230
7.50
0.5
UNITS
A
A
mJ
A
Document Number: 93416
Revision: 18-Jun-08
For technical questions, contact: [e-mail]
www.vishay.com
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