8STH06FP_10 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Hyperfast Rectifier, 8 A FRED Pt

VS-8STH06FP
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt^®
1
2
3
3L TO-220 FULL-PAK
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
t_rr (typ.)
T_J max.
Diode variation
3L TO-220FP
8A
600 V
2.4 V
See Recovery table
175 °C
Doubler
FEATURES
• Hyperfast recovery time, extremely low Q_rr
• 175 °C maximum operating junction temperature
• High frequency PFC CCM operation
• Low leakage current
• Halogen-free according to IEC 61249-2-21 definition
• Designed and qualified for industrial level
DESCRIPTION
VS-8STH06FP 600 V series are the state of the art
tandem hyperfast recovery rectifiers: excellent switching
performance and extremely low forward voltage drop trade
off is overcome, boosting overall application performance.
Specially designed for CCM PFC application, these devices
show incomparable performance in every current intensive
hard switching application.
Optimized reverse recovery stored charge enables
downsizing of boosting switch and cooling system,
increased operating frequency make possible use of smaller
reactive elements. Cost effective PFC application is then
possible with high efficiency over wide input voltage range
and loading factor.
Plastic insulated package features easy mounting together
with not insulated parts.
ABSOLUTE MAXIMUM RATINGS FOR BOTH DIODES
PARAMETER
SYMBOL
TEST CONDITIONS
Repetitive peak reverse voltage
DC forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
V_RRM
I_F
I_FSM
T_J, T_Stg
50 % duty cycle, rect. waveforms, T_C = 93 °C
T_C = 25 °C
MAX.
600
8
100
- 55 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS FOR BOTH DIODES (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
Breakdown voltage,
blocking voltage
V_BR,
V_R
I_R = 100 μA
I_F = 8 A
600
-
-
-
2.1
2.4
Forward voltage
V_F
I_F = 8 A, T_J = 125 °C
-
1.7
2
I_F = 8 A, T_J = 150 °C
-
1.6
1.8
V_R = V_R rated
-
<1
10
Reverse leakage current
I_R
T_J = 125 °C, V_R = V_R rated
-
7
80
T_J = 150 °C, V_R = V_R rated
-
27
100
Junction capacitance
C_T
V_R = 600 V
-
12
-
UNITS
V
μA
pF
Document Number: 94554 For technical questions within your region, please contact one of the following:
Revision: 19-Aug-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
1