8S2TH06I-M Datasheet, PDF (1/7 Pages) Vishay Siliconix – Hyperfast Rectifier, 8 A FRED Pt®

VS-8S2TH06I-M
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt^®
2L TO-220
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2
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
t_rr (typ.)
T_J max.
Diode variation
2L TO-220 Insulated
8A
600 V
3.1 V
See Recovery table
175 °C
Doubler
FEATURES
• Hyperfast recovery time, extremely low Q_rr
• Isolated TO-220 2 pin
• High frequency PFC CCM operation
• 175 °C maximum operating junction temperature
• Low leakage current
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
• Designed and qualified for industrial level
DESCRIPTION
VS-8S2TH06I-M 600 V series are the state of the art
tandem hyperfast recovery rectifiers: the new insulated 2 pin
TO-220 package provide benchmark thermal resistance
that coupled with excellent switching performance and low
forward voltage drop allow this device to provide 8 A DC at
120 °C case temperature.
Specially designed for CCM PFC application, these devices
show incomparable performance in every current intensive
hard switching application.
Optimized reverse recovery stored charge enables
downsizing of boosting switch and cooling system.
Increased operating frequency make possible use of smaller
reactive elements. Cost effective PFC application is then
possible with high efficiency over wide input voltage range
and loading factor.
The new ceramic insulated package warranty insulation
up to 2 kV and features easy mounting together with not
insulated parts, with minimum effect on R_thJC.
ABSOLUTE MAXIMUM RATINGS FOR BOTH DIODES
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Repetitive peak reverse voltage
DC forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
V_RRM
I_F
I_FSM
T_J, T_Stg
50 % duty cycle, rect. waveforms, T_C = 120 °C
T_C = 25 °C
600
8
140
- 55 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS FOR BOTH DIODES (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
Breakdown voltage,
blocking voltage
V_BR,
V_R
I_R = 100 μA
I_F = 8 A
600
-
-
-
2.7
3.1
Forward voltage
V_F
I_F = 8 A, T_J = 125 °C
-
2.1
2.3
I_F = 8 A, T_J = 150 °C
-
1.9
2.1
V_R = V_R rated
-
<1
10
Reverse leakage current
I_R
T_J = 125 °C, V_R = V_R rated
-
7
50
T_J = 150 °C, V_R = V_R rated
-
27
80
Junction capacitance
C_T
V_R = 600 V
-
10.5
-
UNITS
V
μA
pF
Document Number: 93049 For technical questions within your region, please contact one of the following:
Revision: 19-Aug-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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