8EWS16SPBF Datasheet, PDF (1/7 Pages) Vishay Siliconix – Surface Mountable Input Rectifier Diode, 8 A

8EWS16SPbF High Voltage Series
Vishay High Power Products
Surface Mountable
Input Rectifier Diode, 8 A
Base
cathode
4
D-PAK
1
2
3
Anode Cathode Anode
PRODUCT SUMMARY
V_F at 10 A
I_FSM
V_RRM
1V
200 A
1600 V
DESCRIPTION/FEATURES
The 8EWS16SPbF rectifier High Voltage Series
has been optimized for very low forward voltage
drop, with moderate leakage. The glass passivation
technology used has reliable operation up to 150 °C junction
temperature.
The high reverse voltage range available allows design of
input stage primary rectification with outstanding voltage
surge capability.
Typical applications are in input rectification and these
products are designed to be used with Vishay HPP switches
and output rectifiers which are available in identical package
outlines.
This product has been designed and qualified for industrial
level.
Compliant to RoHS directive 2002/95/EC.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
NEMA FR-4 or G10 glass fabric-based epoxy
1.2
with 4 oz. (140 µm) copper
Aluminum IMS, R_thCA = 15 °C/W
2.5
Aluminum IMS with heatsink, R_thCA = 5 °C/W
5.5
Note
• T_A = 55 °C, T_J = 125 °C, footprint 300 mm²
THREE-PHASE BRIDGE
1.6
2.8
6.5
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
Sinusoidal waveform
V_RRM
I_FSM
V_F
8 A, T_J = 25 °C
T_J
VALUES
8
1600
200
1.10
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
8EWS16SPbF
V_RRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
1600
V_RSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1700
I_RRM
AT 150 °C
mA
0.5
Document Number: 94350
Revision: 01-Jul-09
For technical questions, contact: [e-mail]
www.vishay.com
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