8ETX06S Datasheet, PDF (1/7 Pages) Vishay Siliconix – Hyperfast Rectifier, 8 A FRED PtTM

8ETX06S/8ETX06-1
Vishay High Power Products
8ETX06S
Base
cathode
2
1
3
N/C
Anode
D²PAK
PRODUCT SUMMARY
t_rr (typical)
I_F(AV)
V_R
Hyperfast Rectifier,
8 A FRED Pt^TM
8ETX06-1
2
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Designed and qualified for industrial level
1
N/C
3
Anode
TO-262
15 ns
8A
600 V
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC-DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
V_RRM
Average rectified forward current
I_F(AV)
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
I_FSM
I_FM
T_J, T_Stg
TEST CONDITIONS
T_C = 143 °C
T_J = 25 °C
MAX.
600
8
110
18
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
Series inductance
V_BR,
V_R
V_F
I_R
C_T
L_S
I_R = 100 µA
600
I_F = 8 A
-
I_F = 8 A, T_J = 150 °C
-
V_R = V_R rated
-
T_J = 150 °C, V_R = V_R rated
-
V_R = 600 V
-
Measured lead to lead 5 mm from package body
-
TYP.
-
2.3
1.4
0.3
35
17
8.0
MAX.
-
3.0
1.7
50
500
-
-
UNITS
V
µA
pF
nH
Document Number: 93937
Revision: 08-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
1