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8ETX06PBF_11 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Hyperfast Rectifier, 8 A FRED Pt
VS-8ETX06PbF, VS-8ETX06FPPbF
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt®
TO-220AC
Base
cathode
2
TO-220 FULL-PAK
1
3
Cathode Anode
VS-8ETX06PbF
1
3
Cathode Anode
VS-8ETX06FPPbF
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr (typ.)
TJ max.
Diode variation
TO-220AC, TO-220FP
8A
600 V
3.0 V
15 ns
175 °C
Single die
FEATURES
• Hyperfast recovery time
• Benchmark ultralow forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Fully isolated package (VINS = 2500 VRMS)
• UL E78996 pending
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recover time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
SYMBOL
VRRM
Average rectified forward current
FULL-PAK
Non-repetitive peak surge current
Repetitive peak forward current
Operating junction and storage temperatures
IF(AV)
IFSM
IFM
TJ, TStg
TEST CONDITIONS
TC = 143 °C
TC = 106 °C
TJ = 25 °C
VALUES
600
8
110
18
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
Series inductance
VBR,
VR
VF
IR
CT
LS
IR = 100 μA
600
IF = 8 A
-
IF = 8 A, TJ = 150 °C
-
VR = VR rated
-
TJ = 150 °C, VR = VR rated
-
VR = 600 V
-
Measured lead to lead 5 mm from package body
-
TYP.
-
2.3
1.4
0.3
35
17
8.0
MAX.
-
3.0
1.7
50
500
-
-
UNITS
V
μA
pF
nH
Document Number: 94032 For technical questions within your region, please contact one of the following:
Revision: 28-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000