8ETH03S Datasheet, PDF (1/7 Pages) Vishay Siliconix – Hyperfast Rectifier,8 A FRED PtTM

8ETH03S/8ETH03-1
Vishay High Power Products
8ETH03S
Base
cathode
2
1
3
N/C
Anode
D²PAK
PRODUCT SUMMARY
t_rr
I_F(AV)
V_R
Hyperfast Rectifier,
8 A FRED Pt^TM
8ETH03-1
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Designed and qualified for industrial level
2
1
N/C
3
Anode
TO-262
35 ns
8A
300 V
DESCRIPTION/APPLICATIONS
300 V series are the state of the art hyperfast recovery
rectifiers designed with optimized performance of forward
voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Repetitive peak reverse voltage
Average rectified forward current
V_RRM
I_F(AV)
Non-repetitive peak surge current
I_FSM
Operating junction and storage temperatures
T_J, T_Stg
TEST CONDITIONS
T_C = 155 °C
T_C = 25 °C
MAX.
300
8
100
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
V_BR,
V_R
I_R = 100 µA
300
I_F = 8 A
-
Forward voltage
V_F
I_F = 8 A, T_J = 125 °C
-
V_R = V_R rated
-
Reverse leakage current
I_R
T_J = 125 °C, V_R = V_R rated
-
Junction capacitance
C_T
V_R = 300 V
-
Series inductance
L_S
Measured lead to lead 5 mm from package body
-
TYP.
-
1.0
0.83
0.02
6.0
31
8
MAX.
-
1.25
1.00
20
200
-
-
UNITS
V
µA
pF
nH
Document Number: 93933
Revision: 08-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
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