81CNQ035APBF_10 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Schottky Rectifier New Generation 3 D-61 Package, 2 x 40 A

VS-81CNQ...A PbF Series
Vishay High Power Products
Schottky Rectifier
New Generation 3 D-61 Package, 2 x 40 A
VS-81CNQ...APbF
D-61-8
VS-81CNQ...ASMPbF
Base
common
cathode
1
2
Anode Common
1
cathode
3
Anode
2
D-61-8-SM
VS-81CNQ...ASLPbF
1
2
Anode Common
1
cathode
3
Anode
2
Base
common
cathode
D-61-8-SL
PRODUCT SUMMARY
I_F(AV)
V_R
1
Anode
1
3
Anode
2
2 x 40 A
35 V to 45 V
FEATURES
• 175 °C T_J operation
• Center tap module
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• New fully transfer-mold low profile, small footprint, high
current package
• Through-hole versions are currently available for use in
lead (Pb)-free applications (“PbF” suffix)
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The center tap Schottky rectifier module has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
Rectangular waveform
Range
I_FSM
t_p = 5 μs sine
V_F
40 Apk, T_J = 125 °C (per leg)
T_J
Range
VALUES
80
35 to 45
4600
0.54
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
VS-81CNQ035APbF
35
VS-81CNQ040APbF
40
VS-81CNQ045APbF
45
UNITS
V
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94595
Revision: 16-Apr-10
For technical questions, contact: [e-mail]
www.vishay.com
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