80EPS08PBF Datasheet, PDF (1/7 Pages) Vishay Siliconix – Input Rectifier Diode, 80 A

80EPS..PbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 80 A
Base
cathode
4, 2
TO-247AC
1
Anode
3
Anode
PRODUCT SUMMARY
V_F at 80 A
I_FSM
V_RRM
1.17 V
1450 A
800/1200 V
DESCRIPTION/FEATURES
The 80EPS..PbF rectifier High Voltage Series
has been optimized for very low forward voltage
drop, with moderate leakage. The glass
passivation technology used has reliable
operation up to 150 °C junction temperature.
Typical applications are in input rectification and these
products are designed to be used with Vishay HPP switches
and output rectifiers which are available in identical package
outlines.
This product has been designed and qualified for industrial
level.
Compliant to RoHS directive 2002/95/EC.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J
Sinusoidal waveform
Range
80 A, T_J = 25 °C
VALUES
80
800/1200
1450
1.17
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
80EPS08PbF
80EPS12PbF
V_RRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
1200
V_RSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1300
I_RRM
AT 150 °C
mA
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
I_F(AV)
I_FSM
T_C = 100 °C, 180° conduction half sine wave
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
Maximum I²t for fusing
I²t
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
Maximum I²âˆšt for fusing
I²âˆšt
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
80
1450
1500
10 500
14 000
105 000
UNITS
A
A²s
A²âˆšs
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94347
Revision: 07-Jul-09
For technical questions, contact: [e-mail]
www.vishay.com
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