80EBU02_11 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Ultrafast Soft Recovery Diode, 80 A FRED Pt

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VS-80EBU02
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 80 A FRED Pt^®
Cathode
Anode
PowerTab^®
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
t_rr (typ.)
T_J max.
Diode variation
PowerTab^®
80 A
200 V
1.13 V
See recovery table
175 °C
Single die
FEATURES
• Ultrafast recovery time
• 175 °C max. operating junction temperature
• Screw mounting only
• Designed and qualified according to
JEDEC-JESD47
• Compliant to RoHS Directive 2002/95/EC
• PowerTab^® package
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
V_R
Continuous forward current
I_F(AV)
Single pulse forward current
I_FSM
Maximum repetitive forward current
Operating junction and
storage temperatures
I_FRM
T_J, T_Stg
TEST CONDITIONS
T_C = 112 °C
T_C = 25 °C
Square wave, 20 kHz
MAX.
200
80
800
160
- 55 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
Forward voltage
V_BR,
V_r
V_F
I_R = 50 μA
I_F = 80 A
I_F = 80 A, T_J = 175 °C
Reverse leakage current
V_R = V_R rated
I_R
T_J = 150 °C, V_R = V_R rated
Junction capacitance
C_T
V_R = 200 V
Series inductance
L_S
Measured lead to lead 5 mm from package body
MIN.
200
-
-
-
-
-
-
TYP.
-
0.98
0.79
-
-
89
3.5
MAX. UNITS
-
1.13
V
0.92
50
μA
2
mA
-
pF
-
nH
Revision: 15-Jun-11
1
Document Number: 93024
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