73224 Datasheet, PDF (1/8 Pages) Vishay Siliconix – N- and P-Channel 40-V (D-S) MOSFET

New Product
Si4565DY
Vishay Siliconix
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
N-Channel
40
0.040 @ V_GS = 10 V
0.045 @ V_GS = 4.5 V
0.054 @ V_GS = −10 V
P-Channel
−40
0.072 @ V_GS = −4.5 V
I_D (A)
5.2
4.9
−4.5
−3.9
Q_g (Typ)
8
9
FEATURES
D TrenchFETr Power MOSFET
D 100% R_g Tested
D UIS Tested
APPLICATIONS
D CCFL Inverter
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Ordering Information: Si4565DY—E3
Si4565DY-T1—E3 (with Tape and Reel)
D₁
S₂
G₂
G₁
S₁
N-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol 10 secs Steady State 10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
T_A = 25_C
T_A = 70_C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipatio^a
T_A = 25_C
T_A = 70_C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
40
−40
"12
"16
5.2
3.9
−4.5
−3.3
4.2
3.1
−3.6
−2.7
30
1.7
0.9
−1.7
−0.9
13
16
8.5
13
2.0
1.1
2
1.1
1.3
0.7
1.3
0.7
−55 to 150
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 10 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 73224
S-50033—Rev. A, 17-Jan-05
Symbol
R_thJA
R_thJF
N-Channel
Typ
Max
52
62.5
90
110
32
40
P-Channel
Typ
Max
50
62.5
85
110
30
40
Unit
_C/W
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