73113 Datasheet, PDF (1/8 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

P-Channel 60-V (D-S) MOSFET
Si7465DP
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.064 at V_GS = - 10 V
- 60
0.080 at V_GS = - 4.5 V
I_D (A)
-5
- 4.5
Q_g (Typ.)
26
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• New Low Thermal Resistance PowerPAK^®
Package with Low 1.07 mm Profile
PowerPAK SO-8
6.15 mm
S
1
S
5.15 mm
2
S
3
G
4
D
8
D
7
D
6
D
5
Bottom View
Ordering Information: Si7465DP-T1-E3 (Lead (Pb)-free)
Si7465DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150°C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^b,c
T_A = 25 °C
T_A = 70 °C
L = 0.1 mH
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
- 60
± 20
-5
- 3.2
-4
- 2.6
- 25
- 2.9
- 1.2
22
24.2
3.5
1.5
2.2
0.94
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^a
t ≤ 10 s
Steady State
R_thJA
27
60
36
85
°C/W
Maximum Junction-to-Case (Drain)
Steady State
R_thJC
3.3
4.3
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73113
S09-0271-Rev. C, 16-Feb-09
www.vishay.com
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