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| 72893 Datasheet, PDF (1/1 Pages) Vishay Siliconix – Dual N-Channel, 30-V (D-S) MOSFET Specification Comparison | |||
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Specification Comparison
Vishay Siliconix
Si4804BDY vs. Si4804DY
Description: Dual N-Channel, 30-V (D-S) MOSFET
Package: SOIC-8
Pin Out:
Identical
Part Number Replacements:
Si4804BDY Replaces Si4804DY
Si4804BDYâE3 (Lead Free version) Replaces Si4804DY
Si4804BDY-T1 Replaces Si4804DY-T1
Si4804BDY-T1âE3 (Lead Free version) Replaces Si4804DY-T1
Summary of Performance:
The Si4804BDY is the replacement for the original Si4804DY; both parts perform identically including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si4804BDY Si4804DY
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (MOSFET Diode Conduction)
Power Dissipation
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
VDS
VGS
ID
IDM
IS
PD
Tj and Tstg
RthJA
30
"20
7.5
6
30
2.3
1.7
2.0
â55 to 150
62.5
30
"20
7.5
6
20
1.7
2.0
1.3
â55 to 150
62.5
V
A
W
_C
_C/W
SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED)
Si4804BDY
Parameter
Symbol
Min
Typ
Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
VGS = 10 V
VGS = 10 V
VGS = 4.5 V
VG(th)
IGSS
IDSS
ID(on)
rDs(on)
gfs
VSD
0.8
3.0
"100
1
20
0.017
0.022
0.024
0.030
19
0.75
1.2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Switching
Qg
7
11
Qgs
2.9
Qgd
2.5
Rg
0.5
1.5
2.6
Turn-On Time
Turn-Off Time
Source-Drain Reverse Recovery Time
td(on)
tr
td(off)
tf
trr
9
15
10
17
19
30
9
15
35
55
NS denotes parameter not specified in original data sheet.
Si4804DY
Min Typ Max Unit
0.8
V
"100
nA
1
mA
20
A
0.018
0.022
0.024
0.030
W
22
S
0.8
1.2
V
13
20
2
nC
2.7
NS
W
8
16
10
20
21
40
ns
10
20
40
80
Document Number: 72893
22-Mar-04
www.vishay.com
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