72616 Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
P-Channel 20-V (D-S) MOSFET
Si7413DN
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.015 @ V_GS = −4.5 V
−20
0.020 @ V_GS = −2.5 V
0.029 @ V_GS = −1.8 V
I_D (A)
−13.2
−11.4
−9.5
FEATURES
D TrenchFETr Power MOSFET
D New PowerPAKr Package
− Low Thermal Resistance, R_thJC
− Low 1.07-mm Profile
APPLICATIONS
D Load Switch
PowerPAK 1212-8
3.30 mm
D
8
D
7
D
6
D
5
S
1
S
3.30 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7413DN-T1—E3
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−20
"8
−13.2
−8.4
−9.5
−6.1
−30
−3.2
−1.3
3.8
1.5
2.0
0.8
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72616
S-32519—Rev. A, 08-Dec-03
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
26
65
1.9
Maximum
33
81
2.4
Unit
_C/W
www.vishay.com
1