70CRU02PBF_11 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Ultrafast Rectifier, 2 x 35 A FRED Pt

VS-70CRU02PbF
Vishay Semiconductors
Ultrafast Rectifier, 2 x 35 A FRED Pt^®
TO-218
Base
common
cathode
2
1
3
Anode
2 Anode
1 Common 2
cathode
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
t_rr typ.
T_J max.
Diode variation
TO-218
2 x 35 A
200 V
1.09 V
See Recovery table
175 °C
Common cathode
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Up to 175 °C operating junction temperature
• Common-cathode diodes
• Low leakage current
• Optimized for power conversion: welding and industrial
SMPS applications
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
• Halogen-free according to IEC 61249-2-21 definition
DESCRIPTION
The VS-70CRU02PbF integrates two state of the art Vishay
Semiconductors ultrafast recovery rectifiers in the
common-cathode configuration. The planar structure of the
diodes, and the platinum doping life-time control, provide a
ultrasoft recovery current shape, together with the best
overall performance, ruggedness and reliability
characteristics. These devices are thus intended for high
frequency applications in which the switching energy is
designed not to be predominant portion of the total energy,
such as in the output rectification stage of welding
machines, SMPS, DC/DC converters. Their extremely
optimized stored charge and low recovery current reduce
both over-dissipation in the switching elements (and
snubbers) and EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Continuous forward current per diode
Cathode to anode voltage
Single pulse forward current per diode
Maximum power dissipation per module
Operating junction and storage temperatures
I_F(AV)
V_R
I_FSM
P_D
T_J, T_Stg
TEST CONDITIONS
T_C = 145 °C
T_C = 25 °C
T_C = 100 °C
MAX.
35
200
300
67
- 55 to 175
UNITS
A
V
A
W
°C
ELECTRICAL SPECIFICATIONS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage, blocking voltage
V_BR, V_R
I_R = 60 μA
200
I_F = 35 A
-
Forward voltage
V_F
I_F = 35 A, T_J = 125 °C
-
I_F = 35 A, T_J = 175 °C
-
Reverse leakage current
Junction capacitance
Series inductance
V_R = V_R rated
-
I_R
T_J = 150 °C, V_R = V_R rated
-
C_T
V_R = 200 V
-
Measured from A-lead to K-lead 5 mm
L_S
from package body
-
TYP.
-
0.95
0.9
0.85
-
-
50
10
MAX.
-
1.09
1.0
0.9
60
2
-
UNITS
V
μA
mA
pF
-
nH
Document Number: 94509 For technical questions within your region, please contact one of the following:
Revision: 09-Feb-11
[e-mail], [e-mail], [e-mail]
www.vishay.com
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