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6TQ035PBF_12 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Schottky Rectifier, 6 A
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VS-6TQ...PbF Series, VS-6TQ...-N3 Series
Vishay Semiconductors
Schottky Rectifier, 6 A
Base
cathode
2
TO-220AC
1
3
Cathode Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
TO-220AC
6A
35 V, 40 V, 45 V
0.53 V
7 mA at 125 °C
175 °C
Single die
8 mJ
FEATURES
• 175 °C TJ operation
• High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-6TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
Range
IFSM
tp = 5 μs sine
VF
6 Apk, TJ = 125 °C
TJ
Range
VALUES
6
35 to 45
690
0.53
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC
reverse voltage
Maximum working
peak reverse
voltage
VR
VRWM
VS-
6TQ035PbF
35
VS-
6TQ035-N3
35
VS-
6TQ040PbF
40
VS-
6TQ040-N3
40
VS-
6TQ045PbF
45
VS-
6TQ045-N3
UNITS
45
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
See fig. 7
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
VALUES
50 % duty cycle at TC = 164 °C, rectangular waveform
6
5 µs sine or 3 µs rect. pulse Following any rated load 690
condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
140
TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH
8
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1.20
UNITS
A
A
mJ
A
Revision: 29-Aug-11
1
Document Number: 94252
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000