6CUT10-E Datasheet, PDF (1/9 Pages) Vishay Siliconix – High Performance Schottky Generation 5.0, 2 x 3 A

VS-6CUT10-E, VS-6CWT10FN-E
Vishay Semiconductors
High Performance Schottky Generation 5.0, 2 x 3 A
I-PAK (TO-251AA)
Base
common
cathode
4
D-PAK (TO-252AA)
Base
common
cathode
4
1
3
Anode
2 ^Anode
Common
cathode
VS-6CUT10-E
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
I_RM max.
T_J max.
Diode variation
E_AS
2
Common
1 ^cathode 3
Anode
Anode
VS-6CWT10FN-E
D-PAK (TO-252AA),
I-PAK (TO-251AA)
2x3A
100 V
0.63 V
1 mA at 125 °C
175 °C
Common cathode
12 mJ
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized V_F vs. I_R trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Specific for PV cells bypass diode
• High efficiency SMPS
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
V_RRM
V_F
3 A_pk, T_J = 125 °C (typical, per leg)
T_J
Range
VALUES
100
0.6
- 55 to 175
UNITS
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL TEST CONDITIONS
V_R
T_J = 25 °C
VS-6CUT10-E
VS-6CWT10FN-E
100
UNITS
V
Document Number: 94662 For technical questions within your region, please contact one of the following:
Revision: 05-Jan-11
[e-mail], [e-mail], [e-mail]
www.vishay.com
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