63CTQ100GPBF_12 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Schottky Rectifier, 2 x 30 A

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VS-63CTQ100GPbF, VS-63CTQ100G-N3
Vishay Semiconductors
Schottky Rectifier, 2 x 30 A
Base
common
cathode
2
TO-220AB
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
I_RM max.
T_J max.
Diode variation
E_AS
1
2
3
Anode Common Anode
cathode
TO-220AB
2 x 30 A
100 V
0.69 V
20 mA at 125 °C
175 °C
Common cathode
11.25 mJ
FEATURES
• 175 °C T_J operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
I_FRM
I_FSM
V_F
T_J
Rectangular waveform (per device)
T_C = 139 °C (per leg)
t_p = 5 μs sine
30 A_pk, T_J = 125 °C
Range
VALUES
60
100
60
1500
0.69
- 65 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
VS-63CTQ100GPbF VS-63CTQ100G-N3
100
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
I_F(AV)
Peak repetitive forward current per leg
I_FRM
Maximum peak one cycle non-repetitive
surge current per leg
I_FSM
Non-repetitive avalanche energy per leg
E_AS
Repetitive avalanche current per leg
I_AR
TEST CONDITIONS
50 % duty cycle at T_C = 139 °C, rectangular waveform
Rated V_R, square wave, 20 kHz, T_C = 140 °C
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse V_RRM applied
T_J = 25 °C, I_AS = 0.75 A, L = 40 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
30
60
60
1500
300
11.25
0.75
UNITS
A
mJ
A
Revision: 29-Aug-11
1
Document Number: 94508
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