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60CPT045_12 Datasheet, PDF (1/8 Pages) Vishay Siliconix – High Performance Schottky Generation 5.0, 2 x 30 A
60CPT045
Vishay High Power Products
High Performance
Schottky Generation 5.0, 2 x 30 A
TO-247AC
Base 2
common
cathode
Anode
2
Anode
1 Common 3
cathode
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level
PRODUCT SUMMARY
IF(AV)
VR
VF at 30 A at 125 °C
2 x 30 A
45 V
0.50 V
APPLICATIONS
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
VF
30 Apk, TJ = 125 °C (typical, per leg)
TJ
Range
VALUES
45
0.46
- 55 to 175
UNITS
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL TEST CONDITIONS
VR
TJ = 25 °C
60CPT045
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
VALUES
30
50 % duty cycle at TC = 159 °C, rectangular waveform
60
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 8 A, L = 4.4 mH
Limited by frequency of operation and time pulse duration so
that TJ < TJ max. IAS at TJ max. as a function of time pulse
See fig. 8
2500
450
140
IAS at
TJ max.
UNITS
A
mJ
A
Document Number: 94571
Revision: 07-Oct-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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