50UQ03GPBF_12 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Schottky Rectifier, 5.5 A

50UQ03GPbF
Vishay High Power Products
Schottky Rectifier, 5.5 A
I-PAK
Base
cathode
4, 2
1
Anode
3
Anode
PRODUCT SUMMARY
I_F(AV)
V_R
5.5 A
30 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
Rectangular waveform
I_FSM
t_p = 5 µs sine
V_F
5 Apk, T_J = 125 °C
T_J
Range
FEATURES
• 150 °C T_J operation
• Unique I-PAK outline
• Center tap configuration
• Small foot print
Available
RoHS*
COMPLIANT
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for AEC Q101 level
DESCRIPTION
The 50UQ03GPbF I-PAK Schottky rectifier has been
designed for applications requiring low forward drop and
small foot prints on PC board. Typical applications are in disk
drives, switching power supplies, converters, freewheeling
diodes, battery charging, and reverse battery protection.
VALUES
5.5
30
240
0.35
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
50UQ03GPbF
30
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
I_F(AV)
Maximum peak one cycle
non-repetitive surge current
I_FSM
See fig. 7
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
50 % duty cycle at T_C = 136 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V_RRM applied
T_J = 25 °C, I_AS = 2.0 A, L = 5 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES UNITS
5.5
240
A
100
10
mJ
2.0
A
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94231
Revision: 17-Oct-08
For technical questions, contact: [e-mail]
www.vishay.com
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