50MT060WHTAPBF Datasheet, PDF (1/7 Pages) Vishay Siliconix – 'Half Bridge' IGBT MTP (Warp Speed IGBT), 114 A

50MT060WHTAPbF
Vishay High Power Products
"Half Bridge" IGBT MTP (Warp Speed IGBT), 114 A
MTP
PRODUCT SUMMARY
V_CES
V_CE(on) typical at V_GE = 15 V
I_C at T_C = 25 °C
600 V
2.3 V
114 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
V_CES
Continuous collector current
I_C
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
I_CM
I_LM
I_F
I_FM
V_GE
V_ISOL
Maximum power dissipation
P_D
FEATURES
• Generation 4 warp speed IGBT technology
• HEXFRED^® antiparallel diodes with ultrasoft
reverse recovery
• Very low conduction and switching losses
• Optional SMD thermistor (NTC)
• Very low junction to case thermal resistance
• UL approved file E78996
• Speed 60 kHz to 100 kHz
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low stray inductance design for high speed operation
TEST CONDITIONS
T_C = 25 °C
T_C = 109 °C
T_C = 109 °C
Any terminal to case, t = 1 minute
T_C = 25 °C
T_C = 100 °C
MAX.
600
114
50
350
350
34
200
± 20
2500
658
263
UNITS
V
A
V
W
Document Number: 94468
Revision: 01-Mar-10
For technical questions, contact: [e-mail]
www.vishay.com
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