43CTQ080 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Schottky Rectifier, 2 x 20 A

43CTQ...
Vishay High Power Products
Schottky Rectifier, 2 x 20 A
Base ₂
common
cathode
TO-220AB
Anode
2
Anode
1 Common 3
cathode
PRODUCT SUMMARY
I_F(AV)
V_R
2 x 20 A
80/100 V
FEATURES
• 175 °C T_J operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Designed and qualified for industrial level
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
Rectangular waveform
I_FSM
t_p = 5 µs sine
V_F
20 Apk, T_J = 125 °C (per leg)
T_J
Range
VALUES
40
80/100
850
0.67
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
43CTQ080
80
43CTQ100
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
See fig. 5
per leg
per device
I_F(AV)
Maximum peak one cycle
non-repetitive surge current per leg
I_FSM
See fig. 7
Non-repetitive avalanche energy per leg
E_AS
Repetitive avalanche current per leg
I_AR
TEST CONDITIONS
50 % duty cycle at T_C = 135 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated V_RRM applied
T_J = 25 °C, I_AS = 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
20
40
850
275
7.50
0.50
UNITS
A
A
mJ
A
Document Number: 93917
Revision: 21-Aug-08
For technical questions, contact: [e-mail]
www.vishay.com
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