40MT120UHAPBF_13 Datasheet, PDF (1/12 Pages) Vishay Siliconix – Half Bridge IGBT MTP (Ultrafast NPT IGBT), 80 A

40MT120UHAPbF, 40MT120UHTAPbF
Vishay High Power Products
"Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A
MTP
PRODUCT SUMMARY
V_CES
V_CE(on) typical at V_GE = 15 V
I_C at T_C = 25 °C
1200 V
3.36 V
80 A
FEATURES
• Ultrafast Non Punch Through (NPT) technology
• Positive V_CE(on) temperature coefficient
• 10 μs short circuit capability
• Square RBSOA
• HEXFRED^® antiparallel diodes with ultrasoft reverse
recovery and low V_F
• Al₂O₃ DBC
• Optional SMD thermistor (NTC)
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Speed 8 kHz to 60 kHz
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Benchmark efficiency above 20 kHz
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter breakdown voltage
V_CES
Continuous collector current
I_C
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
RMS isolation voltage
I_CM
I_LM
I_F
I_FM
V_GE
V_ISOL
Maximum power dissipation (only IGBT)
P_D
TEST CONDITIONS
T_C = 25 °C
T_C = 104 °C
T_C = 105 °C
Any terminal to case, t = 1 min
T_C = 25 °C
T_C = 100 °C
MAX.
1200
80
40
160
160
21
160
± 20
2500
463
185
UNITS
V
A
V
W
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94507
Revision: 01-Mar-10
For technical questions, contact: [e-mail]
www.vishay.com
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