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40L15CWPBF_12 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Schottky Rectifier, 2 x 20 A
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VS-40L15CWPbF, VS-40L15CW-N3
Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
Base
common
cathode
2
TO-247AC
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
1
3
Anode
1
2
Anode
2
Common
cathode
TO-247AC
2 x 20 A
15 V
See Electrical table
600 mA at 100 °C
125 °C
Common cathode
10 mJ
FEATURES
• 125 °C TJ operation (VR < 5 V)
• Optimized for OR-ing applications
• Ultra low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and
long term reliability
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-40L15CW... center tap Schottky rectifier module has
been optimized for ultra low forward voltage drop specifically
for the OR-ing of parallel power supplies. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
19 Apk, TJ = 125 °C (per leg, typical)
TJ
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage VRWM
TEST CONDITIONS
TJ = 100 °C
VALUES
40
15
700
0.25
- 55 to 125
UNITS
A
V
A
V
°C
VS-40L15CWPbF
15
VS-40L15CW-N3
15
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
See fig. 5
per leg
per device
IF(AV)
Maximum peak one cycle
non-repetitive surge current per leg
IFSM
See fig. 7
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 86 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse Following any rated
load condition and with
10 ms sine or 6 ms rect. pulse rated VRRM applied
TJ = 25 °C, IAS = 2 A, L = 5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
20
40
700
330
10
2
UNITS
A
mJ
A
Revision: 31-Aug-11
1
Document Number: 94218
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000