31DQ09G Datasheet, PDF (1/5 Pages) Vishay Siliconix – Schottky Rectifier, 3.3 A

31DQ09G, 31DQ10G
Vishay High Power Products
Schottky Rectifier, 3.3 A
C-16
Cathode
Anode
PRODUCT SUMMARY
I_F(AV)
V_R
3.3 A
90/100 V
FEATURES
• Low profile, axial leaded outline
• High frequency operation
• Very low forward voltage drop
• High purity, high temperature epoxy encapsulation
forenhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long
termreliability
• Lead (Pb)-free plating
• Designed and qualified for industrial level
DESCRIPTION
The 31DQ..G axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
Rectangular waveform
I_FSM
t_p = 5 µs sine
V_F
3 Apk, T_J = 25 °C
T_J
VALUES
3.3
90/100
370
0.85
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
31DQ09G
90
31DQ10G
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 4
I_F(AV)
Maximum peak one cycle
non-repetitive surge current, T_J = 25 °C
I_FSM
See fig. 6
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
50 % duty cycle at T_C = 53.4 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V_RRM applied
T_J = 25 °C, I_AS = 1 A, 18 µs square pulse
Current decaying linearly to zero in 1 µs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
3.3
370
60
3.0
0.5
UNITS
A
mJ
A
Document Number: 93322
Revision: 06-Nov-08
For technical questions, contact: [e-mail]
www.vishay.com
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