30ETH06S Datasheet, PDF (1/7 Pages) Vishay Siliconix – Hyperfast Rectifier, 30 A FRED PtTM

30ETH06S/30ETH06-1
Vishay High Power Products
30ETH06S
Base
cathode
2
1
3
N/C
Anode
D²PAK
PRODUCT SUMMARY
t_rr (typical)
I_F(AV)
V_R
Hyperfast Rectifier,
30 A FRED Pt^TM
30ETH06-1
2
1
3
N/C
Anode
TO-262
28 ns
30 A
600 V
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 125 °C operating junction temperature
• Dual diode center tap
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC-DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V_RRM
I_F(AV)
I_FSM
T_J, T_Stg
TEST CONDITIONS
T_C = 103 °C
T_J = 25 °C
MAX.
600
30
200
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
V_BR,
V_R
I_R = 100 µA
600
I_F = 30 A
-
Forward voltage
V_F
I_F = 30 A, T_J = 150 °C
-
V_R = V_R rated
-
Reverse leakage current
I_R
T_J = 150 °C, V_R = V_R rated
-
Junction capacitance
C_T
V_R = 600 V
-
Series inductance
L_S
Measured lead to lead 5 mm from package body
-
TYP.
-
2.0
1.34
0.3
60
33
8.0
MAX.
-
2.6
1.75
50
500
-
-
UNITS
V
µA
pF
nH
Document Number: 93932
Revision: 08-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
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