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30CTT050-F Datasheet, PDF (1/8 Pages) Vishay Siliconix – High Performance Schottky Generation 5.0, 2 x 15 A | |||
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30CTT050-F
Vishay High Power Products
High Performance
Schottky Generation 5.0, 2 x 15 A
Base 2
common
cathode
TO-220AB
Anode
2
Anode
1 Common 3
cathode
FEATURES
⢠175 °C high performance Schottky diode
⢠Very low forward voltage drop
⢠Extremely low reverse leakage
⢠Optimized VF vs. IR trade off for high efficiency
⢠Increased ruggedness for reverse avalanche capability
⢠RBSOA available
⢠Negligible switching losses
⢠Submicron trench technology
⢠Compliant to RoHS directive 2002/95/EC
⢠Designed and qualified for industrial level
PRODUCT SUMMARY
IF(AV)
VR
VF at 15 A at 125 °C
2 x 15 A
50 V
0.54 A
APPLICATIONS
⢠High efficiency SMPS
⢠Automotive
⢠High frequency switching
⢠Output rectification
⢠Reverse battery protection
⢠Freewheeling
⢠DC/DC systems
⢠Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
VF
TJ
15 Apk, TJ = 125 °C (typical, per leg)
Range
VALUES
50
0.50
- 55 to 175
UNITS
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL TEST CONDITIONS
VR
TJ = 25 °C
30CTT050
50
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
IF(AV)
Maximum peak one cycle
non-repetitive surge current per leg
IFSM
Non-repetitive avalanche energy per leg EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 146 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 5 A, L = 4.4 mH
Limited by frequency of operation and time pulse duration so
that TJ < TJ max. IAS at TJ max. as a function of time pulse
See fig. 8
VALUES
15
30
880
220
55
IAS at
TJ max.
UNITS
A
mJ
A
Document Number: 93105
Revision: 01-Oct-09
For technical questions, contact: diodestech@vishay.com
www.vishay.com
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