30CPQ035PBF_12 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Schottky Rectifier, 2 x 15 A

VS-30CPQ0...PbF Series, VS-30CPQ0...-N3 Series
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Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
Base
common
cathode
2
TO-247AC
1
3
Anode
1
2
Anode
2
Common
cathode
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
I_RM max.
T_J max.
Diode variation
E_AS
TO-247AC
2 x 15 A
35 V, 40 V, 45 V
0.50 V
70 mA at 125 °C
150 °C
Common cathode
20 mJ
FEATURES
• 150 °C T_J operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-30CPQ... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
Rectangular waveform
V_RRM
I_FSM
t_p = 5 μs sine
V_F
15 Apk, T_J = 125 °C (per leg)
T_J
VALUES
30
35 to 45
1020
0.50
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-
30CPQ035PbF
Maximum DC
reverse voltage
V_R
Maximum working
35
peak reverse voltage ^VRWM
VS-
30CPQ035-N3
35
VS-
30CPQ040PbF
40
VS-
30CPQ040-N3
40
VS-
30CPQ045PbF
45
VS-
30CPQ045-N3
UNITS
45
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
I_F(AV)
Maximum peak one cycle
non-repetitive surge current per leg
I_FSM
See fig. 7
Non-repetitive avalanche energy per leg
E_AS
Repetitive avalanche current per leg
I_AR
TEST CONDITIONS
50 % duty cycle at T_C = 124 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse V_RRM applied
T_J = 25 °C, I_AS = 3 A, L = 4.4 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
30
1020
265
20
3
UNITS
A
mJ
A
Revision: 01-Sep-11
1
Document Number: 94182
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