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30BQ100GPBF_10 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Schottky Rectifier, 3 A
VS-30BQ100GPbF
Vishay High Power Products
Schottky Rectifier, 3 A
SMC
Cathode
Anode
PRODUCT SUMMARY
IF(AV)
VR
3.0 A
100 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
3.0 Apk, TJ = 125 °C
TJ
Range
FEATURES
• Small foot print, surface mountable
• Very low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The VS-30BQ100GPbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
VALUES
3.0
100
800
0.62
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-30BQ100GPbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TL = 148 °C, rectangular waveform
50 % duty cycle at TL = 138 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
TJ = 25 °C, IAS = 1.0 A, L = 6 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
3.0
4.0
800
70
3.0
0.5
UNITS
A
mJ
A
Document Number: 94506
Revision: 04-Mar-10
For technical questions, contact: diodestech@vishay.com
www.vishay.com
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