2N7002E Datasheet, PDF (1/5 Pages) NXP Semiconductors – N-channel TrenchMOS FET

N-Channel 60-V (D-S) MOSFET
2N7002E
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
60
r_DS(on) (W)
3 @ V_GS = 10 V
I_D (mA)
240
FEATURES
D Low On-Resistance: 3 W
D Low Threshold: 2 V (typ)
D Low Input Capacitance: 25 pF
D Fast Switching Speed: 7.5 ns
D Low Input and Output Leakage
BENEFITS
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
TO-236
(SOT-23)
G1
S2
3D
Top View
Ordering Information: 2N7002E-T1
Marking Code: 7Ewl
E = Part Number Code for 2N7002E
w = Week Code
l = Lot Traceability
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)
Pulsed Drain Current^a
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
P_D
R_thJA
T_J, T_stg
60
"20
240
190
1300
0.35
0.22
357
-55 to 150
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70860
S-31987—Rev. D, 13-Oct-03
Unit
V
mA
W
_C/W
_C
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