2N7002E-T1-E3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET
2N7002E
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
60
3 at V_GS = 10 V
I_D (mA)
240
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Low On-Resistance: 3 
• Low Threshold: 2 V (typ.)
• Low Input Capacitance: 25 pF
• Fast Switching Speed: 7.5 ns
• Low Input and Output Leakage
• Compliant to RoHS Directive 2002/95/EC
TO-236
(SOT-23)
G1
S2
3D
Marking Code: 7E
Top View
Ordering Information: 2N7002E-T1-E3 (Lead (Pb)-free)
2N7002E-T1-GE3 (Lead (Pb)-free and Halogen-free)
BENEFITS
• Low Offset Voltage
• Low-Voltage Operation
• Easily Driven Without Buffer
• High-Speed Circuits
• Low Error Voltage
APPLICATIONS
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current^a
V_DS
V_GS
T_A = 25 °C
T_A = 70 °C
I_D
I_DM
Power Dissipation
T_A = 25 °C
T_A = 70 °C
P_D
Thermal Resistance, Junction-to-Ambient
R_thJA
Operating Junction and Storage Temperature Range
T_J, T_stg
Notes:
a. Pulse width limited by maximum junction temperature.
Limit
60
± 20
240
190
1300
0.35
0.22
357
- 55 to 150
Unit
V
mA
W
°C/W
°C
Document Number: 70860
S11-0183-Rev. F, 07-Feb-11
www.vishay.com
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