2N7000KL Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

New Product
2N7000KL/BS170KL
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
60
r_DS(on) (W)
2 @ V_GS = 10 V
4 @ V_GS = 4.5 V
V_GS(th) (V)
1.0 to 2.5
I_D (A)
0.47
0.33
FEATURES
D TrenchFETr Power MOSFET
D ESD Protected: 2000 V
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS
D Soild State Relays
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
TO-226AA
TO-92-18RM
(TO-92)
(TO-18 Lead Form)
D
S
1
G
2
D
3
Device Marking
D
1
Front View
“S” 2N
7000KL
xxyy
G
2
“S” = Siliconix Logo
xxyy = Date Code
S
3
Device Marking
Front View
“S” BS
G
170KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
100 W
Top View
Top View
S
Ordering Information: 2N7000KL-TR1
Ordering Information: BS170KL-TR1
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)
Pulsed Drain Current^a
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
P_D
R_thJA
T_J, T_stg
60
"20
0.47
0.37
1.0
0.8
0.51
156
−55 to 150
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 72705
S-40247—Rev. A, 16-Feb-04
Unit
V
A
W
_C/W
_C
www.vishay.com
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