2N6661 Datasheet, PDF (1/4 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

2N6661/VN88AFD
Vishay Siliconix
N-Channel 80-V and 90-V (D-S) MOSFETS
PRODUCT SUMMARY
Part Number
2N6661
VN88AFD
V_(BR)DSS Min (V)
90
80
r_DS(on) Max (W)
4 @ V_GS = 10 V
4 @ V_GS = 10 V
V_GS(th) (V)
0.8 to 2
0.8 to 2.5
I_D (A)
0.9
1.29
FEATURES
D Low On-Resistance: 3.6 W
D Low Threshold: 1.6 V
D Low Input Capacitance: 35 pF
D Fast Switching Speed: 6 ns
D Low Input and Output Leakage
BENEFITS
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories, Transistors,
etc.
D Battery Operated Systems
D Solid-State Relays
TO-205AD
(TO-39)
S
1
2
G
3
D
Top View
2N6661
Device Marking
Side View
2N6661
“S” fllxxyy
“S” = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
TO-220SD
D
(Tab-Drain)
SGD
Front View
VN88AFD
Device Marking
Front View
G
VN88AFD
“S” xxyy
“S” = Siliconix Logo
xxyy = Date Code
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
2N6661
VN88AFD
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)
Pulsed Drain Current^a
Power Dissipation
Thermal Resistance, Junction-to-Ambient^b
Thermal Resistance, Junction-to-Case
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 100_C
T_C = 25_C
T_C = 100_C
Notes
a. Pulse width limited by maximum junction temperature.
b. This parameter not registered with JEDEC.
V_DS
V_GS
I_D
I_DM
P_D
R_thJA
R_thJC
T_J, T_stg
90
80
"20
"30
0.9
1.29
0.7
0.81
"3
"3
6.25
15
2.5
6
170
8.3
–55 to 150
Unit
V
A
W
_C/W
_C
Document Number: 70224
S-04279—Rev. C, 16-Jul-01
www.vishay.com
11-1