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2N6660 Datasheet, PDF (1/4 Pages) Supertex, Inc – N-Channel Enhancement-Mode Vertical DMOS FETs
2N6660, VQ1004J/P
Vishay Siliconix
N-Channel 60-V (D-S) Single and Quad MOSFETs
PRODUCT SUMMARY
Part Number
2N6660
VQ1004J/P
V(BR)DSS Min (V)
60
rDS(on) Max (W)
3 @ VGS = 10 V
3.5 @ VGS = 10 V
VGS(th) (V)
0.8 to 2
0.8 to 2.5
ID (A)
1.1
0.46
FEATURES
D Low On-Resistance: 1.3 W
D Low Threshold: 1.7 V
D Low Input Capacitance: 35 pF
D Fast Switching Speed: 8 ns
D Low Input and Output Leakage
BENEFITS
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
TO-205AD
(TO-39)
S
1
2
G
3
D
Top View
2N6660
Device Marking
Side View
2N6660
“S” fllxxyy
“S” = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
Dual-In-Line
D1 1
N
S1 2
G1 3
NC 4
G2 5
N
S2 6
D2 7
14 D4
13 S4
12 G4
11 NC
10 G3
9 S3
8 D3
Device Marking
Top View
N
VQ1004J
“S” fllxxyy
VQ1004P
“S” fllxxyy
N
“S” = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
Top View
Plastic: VQ1004J
Sidebraze: VQ1004P
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Single
Total Quad
Parameter
Symbol 2N6660 VQ1004J VQ1004P VQ1004J/P
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ = 150_C)
Pulsed Drain Currenta
TC= 25_C
TC= 100_C
Power Dissipation
Thermal Resistance, Junction-to-Ambientb
TC= 25_C
TC= 100_C
Thermal Resistance, Junction-to-Case
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
b. This parameter not registered with JEDEC.
VDS
VGS
ID
IDM
PD
RthJA
RthJC
TJ, Tstg
60
"20
1.1
0.8
3
6.25
2.5
170
20
60
"30
0.46
0.26
2
1.3
0.52
0.96
60
"20
"0.46
0.26
2
1.3
0.52
0.96
–55 to 150
2
0.8
62.5
Unit
V
A
W
_C/W
_C
Document Number: 70222
S-04379—Rev. E, 16-Jul-01
www.vishay.com
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