25TTSSPBF Datasheet, PDF (1/7 Pages) Vishay Siliconix – Surface Mountable Phase Control SCR, 16 A

25TTS...SPbF High Voltage Series
Vishay High Power Products
Surface Mountable Phase
Control SCR, 16 A
Anode
2
D²PAK
13
Cathode Gate
DESCRIPTION/FEATURES
The 25TTS...SPbF High Voltage Series of silicon
controlled rectifiers are specifically designed for
medium power switching and phase control
applications. The glass passivation technology
Available
RoHS*
COMPLIANT
used has reliable operation up to 125 °C junction
temperature.
PRODUCT SUMMARY
V_T at 16 A
I_TSM
V_RRM
< 1.25 V
300 A
800 to 1600 V
Typical applications are in input rectification (soft start) and
these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
available in identical package outlines.
This product has been designed and qualified for industrial
level and lead (Pb)-free (“PbF” suffix).
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
NEMA FR-4 or G10 glass fabric-based epoxy
3.5
with 4 oz. (140 µm) copper
Aluminum IMS, R_thCA = 15 °C/W
8.5
Aluminum IMS with heatsink, R_thCA = 5 °C/W
Note
• T_A = 55 °C, T_J = 125 °C, footprint 300 mm²
16.5
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
I_T(AV)
I_RMS
V_RRM/V_DRM
I_TSM
V_T
dV/dt
Sinusoidal waveform
16 A, T_J = 25 °C
dI/dt
T_J
THREE-PHASE BRIDGE
5.5
13.5
25.0
VALUES
16
25
800 to 1600
300
1.25
500
150
- 40 to 125
UNITS
A
UNITS
A
V
A
V
V/µs
A/µs
°C
VOLTAGE RATINGS
PART NUMBER
25TTS08SPbF
25TTS12SPbF
25TTS16SPbF
V_RRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1200
1600
V_DRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
1200
1600
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94383
Revision: 06-Aug-08
For technical questions, contact: [e-mail]
I_RRM/I_DRM,
AT 125 °C
mA
10
www.vishay.com
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