25TTS08SPBF Datasheet, PDF (1/8 Pages) Vishay Siliconix – Surface Mountable Phase Control SCR, 16 A

VS-25TTS...SPbF High Voltage Series
Vishay Semiconductors
Surface Mountable Phase Control SCR, 16 A
Anode
2
D²PAK
13
Cathode Gate
PRODUCT SUMMARY
V_T at 16 A
I_TSM
V_RRM
< 1.25 V
300 A
800 V to 1600 V
FEATURES
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21
definition
• Designed and qualified for industrial level
APPLICATIONS
• Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
DESCRIPTION
The VS-25TTS...SPbF High Voltage Series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
3.5
Aluminum IMS, R_thCA = 15 °C/W
8.5
Aluminum IMS with heatsink, R_thCA = 5 °C/W
16.5
Note
• T_A = 55 °C, T_J = 125 °C, footprint 300 mm²
THREE-PHASE BRIDGE
5.5
13.5
25.0
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
I_T(AV)
I_RMS
V_RRM/V_DRM
I_TSM
V_T
dV/dt
Sinusoidal waveform
16 A, T_J = 25 °C
dI/dt
T_J
VALUES
16
25
800 to 1600
300
1.25
500
150
- 40 to 125
UNITS
A
V
A
V
V/μs
A/μs
°C
VOLTAGE RATINGS
PART NUMBER
VS-25TTS08SPbF
VS-25TTS12SPbF
VS-25TTS16SPbF
V_RRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1200
1600
V_DRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
1200
1600
Document Number: 94383 For technical questions within your region, please contact one of the following:
Revision: 09-Jun-10
[e-mail], [e-mail], [e-mail]
I_RRM/I_DRM,
AT 125 °C
mA
10
www.vishay.com
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