25MT060WFAPBF Datasheet, PDF (1/9 Pages) Vishay Siliconix – 'Full Bridge' IGBT MTP (Warp Speed IGBT), 50 A

25MT060WFAPbF
Vishay High Power Products
"Full Bridge" IGBT MTP (Warp Speed IGBT), 50 A
MTP
PRODUCT SUMMARY
V_CES
I_C DC
V_CE(on)
600 V
69 A
2.22 V
FEATURES
• Generation 4 warp speed IGBT technology
• HEXFRED^® antiparallel diodes with ultrasoft
reverse recovery
• Very low conduction and switching losses
• Optional SMT thermistor
• Al₂O₃ DBC
• Very low stray inductance design for high speed operation
• Speed 8 kHz to 60 kHz > 20 kHz hard switching, > 200 kHz
resonant mode
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
V_CES
Continuous collector current
I_C
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
per single IGBT
I_CM
I_LM
I_F
I_FM
V_GE
V_ISOL
P_D
TEST CONDITIONS
T_C = 25 °C
T_C = 80 °C
T_C = 100 °C
Any terminal to case, t = 1 minute
T_C = 25 °C
T_C = 100 °C
MAX.
600
69
46
200
200
25
200
± 20
2500
195
78
UNITS
V
A
V
W
Document Number: 94539
Revision: 01-Mar-09
For technical questions, contact: [e-mail]
www.vishay.com
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