249NQ150PBF Datasheet, PDF (1/6 Pages) Vishay Siliconix – Schottky Rectifier, 240 A

249NQ150PbF
Vishay High Power Products
Schottky Rectifier, 240 A
Lug terminal
anode
HALF-PAK (D-67)
Base
cathode
PRODUCT SUMMARY
I_F(AV)
V_R
240 A
150 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
Rectangular waveform
I_FSM
t_p = 5 µs sine
V_F
240 Apk, T_J = 125 °C
T_J
Range
FEATURES
• 175 °C T_J operation
• Low forward voltage drop
• High frequency operation
RoHS
COMPLIANT
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free
• Designed and qualified for industrial level
DESCRIPTION
The 249NQ.. high current Schottky rectifier module series
has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows
for reliable operation up to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
VALUES
240
150
20 000
0.78
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
249NQ150PbF
150
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
See fig. 5
I_F(AV) 50 % duty cycle at T_C = 121 °C, rectangular waveform
Maximum peak one cycle
non-repetitive surge current
See fig. 7
5 µs sine or 3 µs rect. pulse
Following any rated
I_FSM
load condition and with
10 ms sine or 6 ms rect. pulse _{rated VRRM applied}
Non-repetitive avalanche energy
Repetitive avalanche current
E_AS
T_J = 25 °C, I_AS = 5.5 A, L = 1 mH
Current decaying linearly to zero in 1 µs
I_AR
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
240
20 000
2300
15
1
UNITS
A
mJ
A
Document Number: 94172
Revision: 28-Apr-08
For technical questions, contact: [e-mail]
www.vishay.com
1