20UT04 Datasheet, PDF (1/9 Pages) Vishay Siliconix – High Performance Schottky Generation 5.0, 20 A

VS-20UT04, VS-20WT04FN
Vishay Semiconductors
High Performance Schottky Generation 5.0, 20 A
I-PAK (TO-251AA)
Base
cathode
4, 2
D-PAK (TO-252AA)
Base
cathode
4, 2
1
Anode
3
Anode
VS-20UT04
1
Anode
3
Anode
VS-20WT04FN
PRODUCT SUMMARY
Package
D-PAK (TO-252AA),
I-PAK (TO-251AA)
I_F(AV)
V_R
V_F at I_F
I_RM max.
T_J max.
Diode variation
20 A
45 V
0.53 V
7 mA at 125 °C
175 °C
Single die
E_AS
108 mJ
Note
• V_F measured at 125 °C, connecting 2 anode pins
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized V_F vs. I_R trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Specific for PV cells bypass diode
• High efficiency SMPS
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
V_RRM
V_F
20 Apk, T_J = 125 °C
(typical, measured connecting 2 anode pins)
T_J
Range
VALUES
45
0.480
- 55 to 175
UNITS
V
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
V_R
TEST CONDITIONS
T_J = 25 °C
VS-20UT04
VS-20WT04FN
45
UNITS
V
Document Number: 94573 For technical questions within your region, please contact one of the following:
Revision: 04-Jan-11
[e-mail], [e-mail], [e-mail]
www.vishay.com
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