20TT100_08 Datasheet, PDF (1/7 Pages) Vishay Siliconix – High Performance Schottky Generation 5.0, 20 A

20TT100
Vishay High Power Products
TO-220AC
PRODUCT SUMMARY
I_F(AV)
V_R
V_F at 20 A at 125 °C
High Performance
Schottky Generation 5.0, 20 A
Base
cathode
2
1
3
Cathode Anode
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
RoHS
• Optimized V_F vs. I_R trade off for high efficiency ^COMPLIANT
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level
20 A
100 V
0.67 V
APPLICATIONS
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
V_RRM
V_F
20 Apk, T_J = 125 °C (typical)
T_J
Range
VALUES
100
0.63
- 55 to 175
UNITS
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
TEST CONDITIONS
V_R
T_J = 25 °C
20TT100
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current I_F(AV) 50 % duty cycle at T_C = 160 °C, rectangular waveform
Maximum peak one cycle
non-repetitive surge current
5 µs sine or 3 µs rect. pulse
I_FSM
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V_RRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
E_AS
T_J = 25 °C, I_AS = 1.5 A, L = 60 mH
Limited by frequency of operation and time pulse duration so
I_AR
that T_J < T_J max. I_AS at T_J max. as a function of time pulse
See fig. 8
VALUES
20
900
300
67.5
I_AS at
T_J max.
UNITS
A
mJ
A
Document Number: 94531
Revision: 05-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
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