20MQ100NPBF_10 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Schottky Rectifier, 2.1 A

VS-20MQ100NPbF
Vishay High Power Products
Schottky Rectifier, 2.1 A
SMA
Cathode
Anode
PRODUCT SUMMARY
I_F(AV)
V_R
2.1 A
100 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
Rectangular waveform
V_RRM
I_FSM
t_p = 5 μs sine
V_F
2 Apk, T_J = 125 °C
T_J
Range
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The VS-20MQ100NPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
VALUES
2.1
100
120
0.72
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
VS-20MQ100NPbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 4
I_F(AV)
Maximum peak one cycle
non-repetitive surge current
I_FSM
See fig. 6
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
VALUES
50 % duty cycle at T_C = 113 °C, rectangular waveform
On PC board 9 mm² island (0.013 mm thick copper pad area)
2.1
5 μs sine or 3 μs rect. pulse
Following any rated
120
load condition and with
10 ms sine or 6 ms rect. pulse
rated V_RRM applied
30
T_J = 25 °C, I_AS = 0.5 A, L = 8 mH
1.0
0.5
UNITS
A
A
mJ
A
Document Number: 94591
Revision: 04-Mar-10
For technical questions, contact: [e-mail]
www.vishay.com
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