20MQ040NPBF Datasheet, PDF (1/5 Pages) Vishay Siliconix – Schottky Rectifier, 2.1 A

20MQ040NPbF
Vishay High Power Products
Schottky Rectifier, 2.1 A
SMA
Cathode
Anode
PRODUCT SUMMARY
I_F(AV)
V_R
2.1 A
40 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
Rectangular waveform
I_FSM
t_p = 5 µs sine
V_F
2 Apk, T_J = 125 °C
T_J
Range
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
RoHS
COMPLIANT
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
DESCRIPTION
The 20MQ040NPbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
VALUES
2.1
40
120
0.63
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
20MQ040NPbF
40
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 4
I_F(AV)
Maximum peak one cycle
non-repetitive surge current
I_FSM
See fig. 6
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
VALUES
50 % duty cycle at T_C = 110 °C, rectangular waveform
On PC board 9 mm² island (0.013 mm thick copper pad area)
2.1
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load ₁₂₀
condition and with rated
V_RRM applied
30
T_J = 25 °C, I_AS = 1 A, L = 6 mH
3
1.0
UNITS
A
A
mJ
A
Document Number: 94593
Revision: 01-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
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