20L15TS Datasheet, PDF (1/6 Pages) Vishay Siliconix – Schottky Rectifier, 20 A

20L15TS
Vishay High Power Products
Schottky Rectifier, 20 A
Base
cathode
2
D²PAK
1
3
N/C
Anode
PRODUCT SUMMARY
I_F(AV)
V_R
I_RM
20 A
15 V
600 mA at 100 °C
FEATURES
• 125 °C T_J operation (V_R < 5 V)
• Single diode configuration
• Optimized for OR-ing applications
• Ultra low forward voltage drop
• Guard ring for enhanced ruggedness and long term
reliability
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Designed and qualified for Q101 level
DESCRIPTION
The Schottky rectifier module has been optimized for ultra
low forward voltage drop specifically for the OR-ing of
parallel power supplies. The proprietary barrier technology
allows for reliable operation up to 125 °C junction
temperature. Typical applications are in parallel switching
power supplies, converters, reverse battery protection, and
redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
Rectangular waveform
V_RRM
I_FSM
t_p = 5 µs sine
V_F
19 Apk, T_J = 125 °C (typical)
T_J
Range
VALUES
20
15
700
0.25
- 55 to 125
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
TEST CONDITIONS
T_J = 100 °C
20L15TS
15
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
I_F(AV)
Maximum peak one cycle non-repetitive
surge current
I_FSM
See fig. 7
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
50 % duty cycle at T_C = 85 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V_RRM applied
T_J = 25 °C, I_AS = 2 A, L = 6 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
20
700
330
10
2
UNITS
A
mJ
A
Document Number: 93954
Revision: 22-Aug-08
For technical questions, contact: [e-mail]
www.vishay.com
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