200CNQ045PBF Datasheet, PDF (1/7 Pages) Vishay Siliconix – Schottky Rectifier, 200 A

200CNQ045PbF
Vishay High Power Products
Schottky Rectifier, 200 A
Lug
terminal
anode 1
Lug
terminal
anode 2
TO-244
Base common cathode
PRODUCT SUMMARY
I_F(AV)
V_R
200 A
45 V
FEATURES
• 150 °C T_J operation
• Center tap module
• Low forward voltage drop
• High frequency operation
RoHS
COMPLIANT
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
DESCRIPTION
The 200CNQ... center tap Schottky rectifier module series
has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
Rectangular waveform
V_RRM
I_FSM
t_p = 5 µs sine
V_F
100 Apk, T_J = 125 °C (per leg)
T_J
Range
VALUES
200
45
26 000
0.52
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
200CNQ045PbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
See fig. 5
per leg
per device
I_F(AV)
Maximum peak one cycle
non-repetitive surge current per leg
I_FSM
See fig. 7
Non-repetitive avalanche energy per leg
E_AS
Repetitive avalanche current per leg
I_AR
TEST CONDITIONS
50 % duty cycle at T_C = 116 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated V_RRM applied
T_J = 25 °C, I_AS = 17 A, L = 1 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
100
200
26 000
1550
135
20
UNITS
A
A
mJ
A
Document Number: 94153
Revision: 28-Apr-08
For technical questions, contact: [e-mail]
www.vishay.com
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